odification of materials with tuneable atomic and electronic frameworks. This is often achieved by addition or replacement of metals and cations. Substitution of anions is also possible; here, we present the YBi₂O_3.5+δSe_1-xCl_x family which represent a new class of layered mixed anionic semiconductor materials with complete substitution of Cl by Se charge balanced by the introduction of oxide vacancies. The introduction of Se anions into the visible band gap material YBi₂O₄Cl shifts the band gap from 2.4 to 1.2 eV. This coupled Se/Cl substitution with O vacancy generation enables defect-engineered, tuneable new layered materials with tailored electronic properties in the visible band gap region, opening new pathways for development of semiconductors, thermoelectrics, and mixed oxide ion conductors 248:T5aa,Histone deacetylases (HDACs) 1-3 are key regulators of gene expression and represent important therapeutic targets in cancer, neurodegenerative, and immune disorders. Many potent class I HDAC inhibitors display slow- and tight-binding kinetics, which profoundly influence their efficacy and pharmacodynamics. In particular, their dissociation rate (off kinetic) is critical, since prolonged target engagement greatly influences drug efficacy in vivo. However, the off-kinetics of HDAC inhibitors are often overlooked in the early stages of drug development. Here, we investigated the dissociation kinetics of tucidinostat, trapoxin A, and TNG260 in comparison to the pan-HDAC inhibitor vorinostat. Using biochemical 100-fold jump dilution assays, NanoBRET assays, and cellular washout experiments, we characterized the dissociation of these compounds from purified proteins and in a cellular context. Tucidinostat showed moderately slow off-kinetics, while the clinical candidate TNG260 demonstrated pronounced tight-binding properties. Trapoxin A displayed remarkable discrepancies between assays, as it showed fast dissociation kinetics in the biochemical assay,

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